VolatileDRAM0°C ~ 70°C(TA)1.14V ~ 1.26V-DDR[Parameters, quotations, pictures, datasheet]-ICQQG

Select DDR

Home

Category

DDR

Total: 1

MT46V32M16TG-75Z:C

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 66TSOP

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

pallet

Memory type

Volatile

storage capacity

512Mb(32M x 16)

Voltage - Supply

1.14V ~ 1.26V

2.3V ~ 2.7V

working temperature

0°C ~ 70°C(TA)

Encapsulation/Housing

66-TSSOP (0,400,10,16mm)

Reset

Click the button below to copy the WeChat

Offer Table

Model

Num

Company

Email

We will reply to you through your email address as soon as we receive your offer