Volatile256Mb(16M x 16)-40°C ~ 105°C(TA)2.5V ~ 2.7V-DDR[Parameters, quotations, pictures, datasheet]-ICQQG

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MT46V16M16CY-5B AAT:M TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 60FBGA

MT46V16M16CY-5B AAT:M

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 60FBGA

Price：1+

￥7.30

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

pallet

TR,CT

Memory type

Volatile

storage capacity

256Mb(16M x 16)

Voltage - Supply

2.5V ~ 2.7V

working temperature

-40°C ~ 105°C(TA)

Encapsulation/Housing

60-TFBGA

272-VFBGA

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