DRAM256Mb(16M x 16)-40°C ~ 85°C(TA)2.3V ~ 2.7V-DDR[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR

Total: 2

EM6AA160BKE-4IH

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 60FBGA

Price：1+

￥3.68

EM6AA160TSE-4IG

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 66TSOP II

Price：1+

￥2.78

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR

Memory type

Volatile

storage capacity

256Mb(16M x 16)

Voltage - Supply

2.3V ~ 2.7V

working temperature

-40°C ~ 85°C(TA)

Encapsulation/Housing

60-TFBGA

66-TSSOP (szerokość 0,400,10,16mm)

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