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DDR

Total: 9

MT46V128M4CY-5B:J TR
Brand：Micron
Stock：15805
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
Offer
MT46V32M8P-5B:M TR
Brand：Micron
Stock：17925
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 66TSOP
Offer
MT46V32M8CY-5B:M TR
Brand：Micron
Stock：10642
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 60FBGA
Offer
MT46V32M8P-5B L:M
Brand：Micron
Stock：15848
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 66TSOP
Offer
MT46V32M8CY-5B:M
Brand：Micron
Stock：19412
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 60FBGA
Offer
MT46V32M8P-5B:GTR
Brand：Micron
Stock：11191
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 66TSOP
Offer
Price：1+
￥10.00
MT46V32M8BG-5B:GTR
Brand：Micron
Stock：17889
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 60FBGA
Offer
MT46V32M8TG-5B:G TR
Brand：Micron
Stock：12583
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 66TSOP
Offer
MT46V32M8FG-5B:G TR
Brand：Micron
Stock：19333
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 60FBGA
Offer
Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

bulk

pallet

TR

TR,CT

Memory type

FLASH - NAND

Volatile

storage capacity

256Mb(32M x 8)

512Mb(128M x 4)

2Tb(256G x 8)

256Mb(16M x 16),512M(32M x 16)

Voltage - Supply

1.65V ~ 3.6V

2.5V ~ 2.7V

working temperature

0°C ~ 70°C(TA)

Encapsulation/Housing

60-FBGA

60-TFBGA

mould

66-TSSOP (0,400,10,16mm)

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