256Mb(64M x 4)Surface mount66-TSSOP (0,400,10,16mm)2.3V ~ 2.7V-DDR[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR

Total: 5

MT46V64M4P-6T:K

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 66TSOP

MT46V64M4TG-75:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 66TSOP

MT46V64M4TG-75:G

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 66TSOP

MT46V64M4P-6T:GTR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 66TSOP

MT46V64M4TG-6T:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 66TSOP

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

pallet

TR

TR,CT

Memory type

Volatile

storage capacity

256Mb(64M x 4)

16Gb(256M x 64)

16Gb(512M x 32)

Voltage - Supply

2.3V ~ 2.7V

working temperature

0°C ~ 70°C(TA)

Encapsulation/Housing

84-TFBGA

8-SOIC(0.154,3.90mm wide)

133-VFBGA

66-TSSOP (0,400,10,16mm)

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