16Mb(4M x 4)2.5V ~ 2.7V-DDR[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR

Total: 2

MT46V128M4CY-5B:J TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 60FBGA

MT46V16M16P-5B:K TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 66TSOP

Price：1+

￥16.05

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR

TR,CT

Memory type

Volatile

storage capacity

256Mb(16M x 16)

512Mb(128M x 4)

16Mb(4M x 4)

Voltage - Supply

2.5V ~ 2.7V

working temperature

0°C ~ 70°C(TA)

Encapsulation/Housing

60-TFBGA

66-TSSOP (0,400,10,16mm)

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