VolatileDRAM0°C ~ 70°C(TA)16Mb Flash Memory,4Mb RAM2.3V ~ 2.7V-DDR[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR

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MT46V16M16CY-6:K TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 60FBGA

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR,CT

Memory type

Volatile

storage capacity

256Mb(16M x 16)

16Mb Flash Memory,4Mb RAM

Voltage - Supply

2.3V ~ 2.7V

working temperature

0°C ~ 70°C(TA)

Encapsulation/Housing

60-TFBGA

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