VolatileSurface mount4Gb(4G x 1)0°C ~ 70°C(TA)2.5V ~ 2.7V-DDR[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR

Total: 3

MT46V128M4CY-5B:J TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 60FBGA

MT46V32M16FN-5B:F TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 60FBGA

MT46V32M8TG-5B:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 66TSOP

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR

TR,CT

Memory type

Volatile

storage capacity

256Mb(32M x 8)

512Mb(32M x 16)

512Mb(128M x 4)

4Gb(4G x 1)

Voltage - Supply

2.5V ~ 2.7V

working temperature

0°C ~ 70°C(TA)

Encapsulation/Housing

60-TFBGA

66-TSSOP (0,400,10,16mm)

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