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DDR

Total: 3

MT46V128M4CY-5B:J TR
Brand：Micron
Stock：15805
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
Offer
MT46V32M16P-5B:F TR
Brand：Micron
Stock：14360
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 66TSOP
Offer
Price：1+
￥2.00
MT46V32M8TG-5B:G TR
Brand：Micron
Stock：12583
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 66TSOP
Offer
Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR

TR,CT

Memory type

Volatile

storage capacity

256Mb(32M x 8)

512Mb(32M x 16)

512Mb(128M x 4)

Voltage - Supply

2.5V ~ 2.7V

working temperature

0°C ~ 70°C(TA)

Encapsulation/Housing

60-TFBGA

8-TSSOP(0.173,4.40mm wide)

66-TSSOP (0,400,10,16mm)

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