Volatile0°C ~ 70°C(TA)44-VFBGA2.5V ~ 2.7V-DDR[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR

Total: 2

MT46V128M4CY-5B:J TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 60FBGA

MT46V8M16P-5B:D TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 66TSOP

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR

TR,CT

Memory type

Volatile

storage capacity

512Mb(128M x 4)

128Mb(8M x 16)

Voltage - Supply

2.5V ~ 2.7V

working temperature

0°C ~ 70°C(TA)

Encapsulation/Housing

60-TFBGA

44-VFBGA

66-TSSOP (0,400,10,16mm)

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