TR,CT512Mb(32M x 16)66-TSSOP (0,400,10,16mm)2.3V ~ 2.7V-DDR[Parameters, quotations, pictures, datasheet]-ICQQG

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Total: 2

MT46V32M16P-6T IT:F TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 66TSOP

Price：1+

￥6.50

MT46V32M16P-6T:F TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 66TSOP

Price：1+

￥4.07

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR,CT

Memory type

Volatile

storage capacity

512Mb(32M x 16)

Voltage - Supply

2.3V ~ 2.7V

working temperature

-40°C ~ 85°C(TA)

0°C ~ 70°C(TA)

Encapsulation/Housing

8-UFDFN Exposed Pad

130-VFBGA

66-TSSOP (0,400,10,16mm)

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