TR,CT256Mb(16M x 16)400 MHz450 ps0°C ~ 85°C(TC)-DDR2[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR2

Total: 3

MT47H32M8BP-3:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 60FBGA

MT47H16M16BG-3:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 84FBGA

Price：1+

￥8.66

MT47H256M8EB-25E:C TR

Store: ShenZhen/Hongkong

Description：IC DRAM 2GBIT PARALLEL 60FBGA

Price：1+

￥20.99

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR,CT

Memory type

Volatile

storage capacity

256Mb(32M x 8)

256Mb(16M x 16)

2Gb(256M x 8)

Voltage - Supply

1.7V ~ 1.9V

working temperature

0°C ~ 85°C(TC)

Clock frequency

400 MHz

333 MHz

Access time

450 ps

400 ps

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