bulk512Mb(64M x 8)1.7V ~ 1.9V-40°C ~ 95°C(TC)400 ns-DDR2[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR2

Total: 4

MT47H64M8CB-37E IT:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 60FBGA

MT47H64M8CB-37E IT:B

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 60FBGA

MT47H64M16NF-25E AIT:M

Store: ShenZhen/Hongkong

Description：IC DRAM 1GBIT PARALLEL 84FBGA

Price：1+

￥8.95

MT47H64M8SH-25E IT:H TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 60FBGA

Price：1+

￥5.50

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR

pallet

bulk

Memory type

Volatile

storage capacity

512Mb(64M x 8)

1Gb(64M x 16)

Voltage - Supply

1.7V ~ 1.9V

working temperature

-40°C ~ 95°C(TC)

Clock frequency

400 MHz

267 MHz

Access time

500 ps

400 ps

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