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DDR2

Total: 6

MT47H256M4SH-25E:M
Brand：Micron
Stock：13478
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 60FBGA
Offer
Price：1+
￥20.00
MT47H256M4SH-25E:M TR
Brand：Micron
Stock：14207
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 60FBGA
Offer
Price：1+
￥8.04
MT47H64M16NF-25E AAT:M
Brand：Micron
Stock：14052
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 84FBGA
Offer
Price：1+
￥12.06
MT47H32M16NF-25E AAT:H
Brand：Micron
Stock：16005
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
Offer
Price：1+
￥17.50
MT47H64M16NF-25E AIT:M
Brand：Micron
Stock：12396
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 84FBGA
Offer
Price：1+
￥8.95
MT47H64M16NF-187E:M
Brand：Micron
Stock：13484
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 84FBGA
Offer
Price：1+
￥9.50
Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR

bulk

Memory type

Volatile

storage capacity

512Mb(32M x 16)

1Gb(64M x 16)

1Gb(256M x 4)

Voltage - Supply

1.7V ~ 1.9V

working temperature

0°C ~ 85°C(TC)

-40°C ~ 105°C(TC)

-40°C ~ 95°C(TC)

Clock frequency

533 MHz

400 MHz

Access time

400 ps

350 ps

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