2Gb(128M x 16)400 MHz1.7V ~ 1.9V-DDR2[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR2

Total: 4

IS43DR16128B-25EBL-TR

Store: ShenZhen/Hongkong

Description：IC DRAM 2GBIT PARALLEL 84TWBGA

IS43DR16128B-25EBLI-TR

Store: ShenZhen/Hongkong

Description：IC DRAM 2GBIT PARALLEL 84TWBGA

IS43DR16128B-25EBLI

Store: ShenZhen/Hongkong

Description：IC DRAM 2GBIT PARALLEL 84TWBGA

Price：1+

￥41.48

IS43DR16128C-25DBLI-TR

Store: ShenZhen/Hongkong

Description：IC DRAM 2GBIT PARALLEL 84TWBGA

Price：1+

￥16.80

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR

pallet

Memory type

Volatile

storage capacity

2Gb(128M x 16)

Voltage - Supply

1.7V ~ 1.9V

working temperature

0°C ~ 85°C(TC)

-40°C ~ 85°C(TA)

Clock frequency

400 MHz

Access time

400 ns

400 ps

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