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DDR2

Total: 6

MT47H32M8BP-3:B TR
Brand：Micron
Stock：17848
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 60FBGA
Offer
MT47H32M8BP-37E:B TR
Brand：Micron
Stock：13489
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 60FBGA
Offer
MT47H64M16NF-25E XIT:M TR
Brand：Micron
Stock：15674
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 84FBGA
Offer
Price：1+
￥6.19
MT47H64M16NF-25E AIT:M TR
Brand：Micron
Stock：18157
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 84FBGA
Offer
Price：1+
￥6.19
MT47H32M16NF-25E AIT:H TR
Brand：Micron
Stock：15601
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
Offer
Price：1+
￥5.25
MT47H64M16NF-187E:M
Brand：Micron
Stock：13484
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 84FBGA
Offer
Price：1+
￥9.50
Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR,CT

TR

bulk

Memory type

Volatile

storage capacity

512Mb(32M x 16)

256Mb(32M x 8)

1Gb(64M x 16)

Voltage - Supply

1.7V ~ 1.9V

working temperature

0°C ~ 85°C(TC)

-40°C ~ 85°C(TA)

Clock frequency

533 MHz

400 MHz

333 MHz

267 MHz

Access time

500 ps

450 ps

400 ps

350 ps

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