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DDR2

Total: 7

MT47H32M16CC-5E IT:B TR
Brand：Micron
Stock：19903
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
Offer
MT47H32M16CC-3E:B TR
Brand：Micron
Stock：11425
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
Offer
MT47H32M16CC-37E IT:B TR
Brand：Micron
Stock：12520
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
Offer
MT47H32M16NF-25E AAT:H TR
Brand：Micron
Stock：14392
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
Offer
Price：1+
￥6.39
MT47H32M16NF-25E AIT:H TR
Brand：Micron
Stock：15601
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
Offer
Price：1+
￥5.25
MT47H32M16NF-25E:H TR
Brand：Micron
Stock：14964
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
Offer
Price：1+
￥3.75
MT47H64M8SH-25E IT:H TR
Brand：Micron
Stock：16166
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
Offer
Price：1+
￥5.50
Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR

Memory type

Volatile

storage capacity

512Mb(64M x 8)

512Mb(32M x 16)

Voltage - Supply

1.7V ~ 1.9V

working temperature

0°C ~ 85°C(TC)

-40°C ~ 105°C(TA)

-40°C ~ 95°C(TC)

-40°C ~ 85°C(TA)

Clock frequency

400 MHz

333 MHz

267 MHz

200 MHz

Access time

600 ps

500 ps

450 ps

400 ps

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