TR,CTVolatile1Gb(64M x 16)200 MHz-40°C ~ 105°C(TC)-DDR2[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR2

Total: 2

MT47H64M16NF-25E AAT:M

Store: ShenZhen/Hongkong

Description：IC DRAM 1GBIT PARALLEL 84FBGA

Price：1+

￥12.06

MT47H256M4HQ-5E:E TR

Store: ShenZhen/Hongkong

Description：IC DRAM 1GBIT PARALLEL 60FBGA

Price：1+

￥35.35

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR,CT

bulk

Memory type

Volatile

storage capacity

1Gb(64M x 16)

1Gb(256M x 4)

Voltage - Supply

1.7V ~ 1.9V

working temperature

0°C ~ 85°C(TC)

-40°C ~ 105°C(TC)

Clock frequency

400 MHz

200 MHz

Access time

600 ps

400 ps

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