TR,CT512Mb(32M x 16)267 MHz400 ps-40°C ~ 95°C(TC)-DDR2[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR2

Total: 4

MT47H32M16CC-37E IT:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 84FBGA

MT47H32M16CC-37E IT:B

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 84FBGA

Price：1+

￥3.20

MT47H128M16RT-25E XIT:C TR

Store: ShenZhen/Hongkong

Description：IC DRAM 2GBIT PARALLEL 84FBGA

Price：1+

￥24.66

MT47H128M16RT-25E AIT:C TR

Store: ShenZhen/Hongkong

Description：IC DRAM 2GBIT PARALLEL 84FBGA

Price：1+

￥33.75

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR,CT

TR

pallet

Memory type

Volatile

storage capacity

512Mb(32M x 16)

2Gb(128M x 16)

Voltage - Supply

1.7V ~ 1.9V

working temperature

-40°C ~ 95°C(TC)

Clock frequency

400 MHz

267 MHz

Access time

500 ps

400 ps

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