TR256Mb(16M x 16)333 MHz600 ps1.7V ~ 1.9V-DDR2[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR2

Total: 4

MT47H32M16CC-5E L:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 84FBGA

MT47H32M16CC-5E IT:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 84FBGA

MT47H32M16CC-3E:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 84FBGA

MT47H16M16BG-3:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 84FBGA

Price：1+

￥8.66

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR,CT

TR

Memory type

Volatile

storage capacity

512Mb(32M x 16)

256Mb(16M x 16)

Voltage - Supply

1.7V ~ 1.9V

working temperature

0°C ~ 85°C(TC)

-40°C ~ 95°C(TC)

Clock frequency

333 MHz

200 MHz

Access time

600 ps

450 ps

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