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DDR2

Total: 7

MT47H128M8CF-3 AAT:H TR
Brand：Micron
Stock：15998
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 60FBGA
Offer
MT47H128M8CF-3 AAT:H
Brand：Micron
Stock：19352
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 60FBGA
Offer
Price：1+
￥5.80
MT47H32M16CC-3E:B TR
Brand：Micron
Stock：11425
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
Offer
MT47H32M16CC-3E:B
Brand：Micron
Stock：16911
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
Offer
MT47H128M8BT-3 L:A
Brand：Micron
Stock：17718
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 92FBGA
Offer
MT47H32M8BP-3:B TR
Brand：Micron
Stock：17848
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 60FBGA
Offer
MT47H16M16BG-3:B TR
Brand：Micron
Stock：12090
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 84FBGA
Offer
Price：1+
￥8.66
Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR,CT

TR

pallet

Memory type

Volatile

storage capacity

512Mb(32M x 16)

256Mb(32M x 8)

256Mb(16M x 16)

1Gb(128M x 8)

Voltage - Supply

1.7V ~ 1.9V

working temperature

0°C ~ 85°C(TC)

-40°C ~ 105°C(TC)

Clock frequency

333 MHz

Access time

450 ps

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