CTDRAM1Gb(256M x 4)400 MHz500 ps-DDR2[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR2

Total: 3

MT47H16M16BG-37E:B TR

Store: ShenZhen/Hongkong

Description：IC SDRAM 256MBIT 266MHZ 84FBGA

MT47H256M4SH-25E:M

Store: ShenZhen/Hongkong

Description：IC DRAM 1GBIT PARALLEL 60FBGA

Price：1+

￥20.00

MT47H256M4SH-25E:M TR

Store: ShenZhen/Hongkong

Description：IC DRAM 1GBIT PARALLEL 60FBGA

Price：1+

￥8.04

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

CT

TR

bulk

Memory type

Volatile

storage capacity

256Mb(16M x 16)

1Gb(256M x 4)

Voltage - Supply

1.7V ~ 1.9V

working temperature

0°C ~ 85°C(TC)

Clock frequency

400 MHz

267 MHz

Access time

500 ps

400 ps

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