256Mb(32M x 8)533 MHz350 ps1.7V ~ 1.9V0°C ~ 85°C(TC)-DDR2[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR2

Total: 3

MT47H32M8BP-3:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 60FBGA

MT47H32M8BP-37E:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 60FBGA

MT47H64M16NF-187E:M

Store: ShenZhen/Hongkong

Description：IC DRAM 1GBIT PARALLEL 84FBGA

Price：1+

￥9.50

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR,CT

bulk

Memory type

Volatile

storage capacity

256Mb(32M x 8)

1Gb(64M x 16)

Voltage - Supply

1.7V ~ 1.9V

working temperature

0°C ~ 85°C(TC)

Clock frequency

533 MHz

333 MHz

267 MHz

Access time

500 ps

450 ps

350 ps

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