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DDR2

Total: 7

MT47H64M8CB-37E IT:B TR
Brand：Micron
Stock：17141
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
Offer
MT47H32M16CC-3E:B TR
Brand：Micron
Stock：11425
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
Offer
MT47H32M16CC-37E L:B TR
Brand：Micron
Stock：19987
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
Offer
MT47H32M16CC-37E IT:B TR
Brand：Micron
Stock：12520
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 84FBGA
Offer
MT47H32M8BP-3:B TR
Brand：Micron
Stock：17848
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 60FBGA
Offer
MT47H32M8BP-37E:B TR
Brand：Micron
Stock：13489
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 60FBGA
Offer
MT47H32M16BT-37E:A TR
Brand：Micron
Stock：15384
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 92FBGA
Offer
Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR,CT

TR

Memory type

Volatile

storage capacity

512Mb(64M x 8)

512Mb(32M x 16)

256Mb(32M x 8)

Voltage - Supply

1.7V ~ 1.9V

working temperature

0°C ~ 85°C(TC)

-40°C ~ 95°C(TC)

Clock frequency

333 MHz

267 MHz

Access time

500 ps

450 ps

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