TR2Gb(256M x 8)500 ps0°C ~ 85°C(TC)266 MHz-DDR2[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR2

Total: 2

MT47H32M16CC-37E L:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 84FBGA

MT47H32M16BT-37E:A TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 92FBGA

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR

Memory type

Volatile

storage capacity

512Mb(32M x 16)

Voltage - Supply

1.7V ~ 1.9V

working temperature

0°C ~ 85°C(TC)

Clock frequency

267 MHz

Access time

500 ps

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