TRVolatile2Gb(512M x 4)1.283V ~ 1.45V-DDR3[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR3

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MT41K512M4DA-125:K TR

Store: ShenZhen/Hongkong

Description：IC DRAM 2GBIT PARALLEL 78FBGA

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR

Part status

On sale

Memory type

Volatile

storage capacity

2Gb(512M x 4)

Voltage - Supply

1.283V ~ 1.45V

working temperature

0°C ~ 95°C(TC)

Encapsulation/Housing

78-TFBGA

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