stop productionVolatile-40°C ~ 125°C(TC)1.425V ~ 1.575V-DDR3[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR3

Total: 2

IS46TR16640B-125KBLA3

Store: ShenZhen/Hongkong

Description：IC DRAM 1GBIT PARALLEL 96TWBGA

IS46TR16640B-125KBLA3-TR

Store: ShenZhen/Hongkong

Description：IC DRAM 1GBIT PARALLEL 96TWBGA

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

pallet

TR

Part status

stop production

Memory type

Volatile

storage capacity

1Gb(64M x 16)

Voltage - Supply

1.425V ~ 1.575V

working temperature

-40°C ~ 125°C(TC)

Encapsulation/Housing

96-TFBGA

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