bulkVolatile2Gb(512M x 4)1.283V ~ 1.45V-DDR3[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR3

Total: 4

MT41K512M4DA-125:K

Store: ShenZhen/Hongkong

Description：IC DRAM 2GBIT PARALLEL 78FBGA

MT41K512M4DA-107:K

Store: ShenZhen/Hongkong

Description：IC DRAM 2GBIT PARALLEL 78FBGA

MT41K512M4DA-125:M

Store: ShenZhen/Hongkong

Description：IC DRAM 2GBIT PARALLEL 78FBGA

Price：1+

￥11.50

MT41K256M16TW-107 IT:P TR

Store: ShenZhen/Hongkong

Description：IC DRAM 4GBIT PARALLEL 96FBGA

Price：1+

￥13.75

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

bulk

Part status

On sale

Memory type

Volatile

storage capacity

2Gb(512M x 4)

4Gb(256M x 16)

Voltage - Supply

1.283V ~ 1.45V

working temperature

-40°C ~ 95°C(TC)

0°C ~ 95°C(TC)

Encapsulation/Housing

96-TFBGA

78-TFBGA

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