Not applicable to new designSurface mount4Gb(256M x 16)0°C ~ 95°C(TC)1.425V ~ 1.575V-DDR3[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR3

Total: 1

EM6GE16EWXD-10H

Store: ShenZhen/Hongkong

Description：IC DRAM 4GBIT PARALLEL 96FBGA

Price：1+

￥6.67

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR

Part status

Not applicable to new design

Memory type

Volatile

storage capacity

4Gb(256M x 16)

Voltage - Supply

1.425V ~ 1.575V

working temperature

0°C ~ 95°C(TC)

Encapsulation/Housing

96-TFBGA

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