TR1Gb(64M x 16)0°C ~ 95°C(TC)1.283V ~ 1.45V-DDR3[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR3

Total: 2

MT41K64M16JT-15E:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 1GBIT PARALLEL 96FBGA

MT41K64M16JT-125:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 1GBIT PARALLEL 96FBGA

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR

Part status

On sale

Memory type

Volatile

storage capacity

1Gb(64M x 16)

Voltage - Supply

1.283V ~ 1.45V

working temperature

0°C ~ 95°C(TC)

Encapsulation/Housing

96-TFBGA

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