Not applicable to new design2Gb(256M x 8)0°C ~ 95°C(TC)-DDR3[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR3

Total: 2

EM6HD08EWUF-10H

Store: ShenZhen/Hongkong

Description：IC DRAM 2GBIT PARALLEL 78FBGA

Price：1+

￥3.83

EM6GD08EWUF-10H

Store: ShenZhen/Hongkong

Description：IC DRAM 2GBIT PARALLEL 78FBGA

Price：1+

￥3.83

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR

Part status

Not applicable to new design

Memory type

Volatile

storage capacity

2Gb(256M x 8)

Voltage - Supply

1.283V ~ 1.45V

1.425V ~ 1.575V

working temperature

0°C ~ 95°C(TC)

Encapsulation/Housing

78-TFBGA

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