DRAM200 MHzSurface mount0°C ~ 70°C(TA)90-VFBGA-LPDDR1[Parameters, quotations, pictures, datasheet]-ICQQG

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LPDDR1

Total: 7

MT46H4M32LFB5-5:K

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 90VFBGA

MT46H8M32LFB5-5:H TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 90VFBGA

MT46H8M32LFB5-5:H

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 90VFBGA

Price：1+

￥10.22

MT46H16M32LFCX-5:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 90VFBGA

MT46H16M32LFCX-5:B

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 90VFBGA

MT46H32M32LFCM-5:A TR

Store: ShenZhen/Hongkong

Description：IC DRAM 1GBIT PARALLEL 90VFBGA

MT46H16M32LFCM-5:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 90VFBGA

Brand

Samsung

Micron

nanya

ELPIDA

ISSI

Memory format

DRAM

Installation type

Surface mount

packing

TR,CT

TR

pallet

storage capacity

256Mb(8M x 32)

128Mb(4M x 32)

1Gb(32M x 32)

512Mb(16M x 32)

Voltage - Supply

1.7V ~ 1.95V

working temperature

0°C ~ 70°C(TA)

Clock frequency

200 MHz

Encapsulation/Housing

90-VFBGA

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