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LPDDR1

Total: 7

MT46H256M32R4JV-5 WT:B TR
Brand：Micron
Stock：19984
Store: ShenZhen/Hongkong
Description：IC DRAM 8GBIT PARALLEL 168VFBGA
Offer
MT46H256M32R4JV-5 IT:B TR
Brand：Micron
Stock：12278
Store: ShenZhen/Hongkong
Description：IC DRAM 8GBIT PARALLEL 168VFBGA
Offer
MT46H256M32L4JV-5 WT:B TR
Brand：Micron
Stock：11635
Store: ShenZhen/Hongkong
Description：IC DRAM 8GBIT PARALLEL 168VFBGA
Offer
MT46H256M32L4JV-5 IT:B TR
Brand：Micron
Stock：13412
Store: ShenZhen/Hongkong
Description：IC DRAM 8GBIT PARALLEL 168VFBGA
Offer
MT46H64M32L2JG-5:A TR
Brand：Micron
Stock：17410
Store: ShenZhen/Hongkong
Description：IC DRAM 2GBIT PARALLEL 168VFBGA
Offer
MT46H64M32L2JG-5 IT:A TR
Brand：Micron
Stock：14353
Store: ShenZhen/Hongkong
Description：IC DRAM 2GBIT PARALLEL 168VFBGA
Offer
MT46H32M32LFJG-5 IT:A TR
Brand：Micron
Stock：18488
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 168VFBGA
Offer
Brand

Samsung

Micron

nanya

ELPIDA

ISSI

Memory format

DRAM

Installation type

Surface mount

packing

TR

storage capacity

8Gb(256M x 32)

1Gb(32M x 32)

2Gb(64M x 32)

Voltage - Supply

1.7V ~ 1.95V

working temperature

-40°C ~ 85°C(TA)

0°C ~ 70°C(TA)

-25°C ~ 85°C(TA)

Clock frequency

200 MHz

Encapsulation/Housing

168-VFBGA

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