DRAM-40°C ~ 105°C(TA)54-VFBGA-LPDDR2[Parameters, quotations, pictures, datasheet]-ICQQG

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LPDDR2

Total: 3

MT48H32M16LFB4-6 AAT:C

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 54VFBGA

MT48H32M16LFB4-6 AAT:C TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 54VFBGA

MT48H16M16LFBF-75 AT:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 54VFBGA

Brand

Samsung

Micron

Hynix

nanya

ELPIDA

ISSI

Memory format

DRAM

Installation type

Surface mount

packing

TR

TR,CT

bulk

Memory type

Volatile

storage capacity

512Mb(32M x 16)

256Mb(16M x 16)

working temperature

-40°C ~ 105°C(TA)

Clock frequency

133 MHz

166 MHz

Encapsulation/Housing

54-VFBGA

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