TR,CTVolatile-40°C ~ 85°C(TA)90-VFBGA256Mb(8M x 32)-LPDDR2[Parameters, quotations, pictures, datasheet]-ICQQG

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LPDDR2

Total: 3

MT48H8M32LFB5-75 IT:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 90VFBGA

MT48V8M32LFB5-8 IT TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 90VFBGA

MT48LC8M32LFB5-8 IT TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 90VFBGA

Brand

Samsung

Micron

Hynix

nanya

ELPIDA

ISSI

Memory format

DRAM

Installation type

Surface mount

packing

TR,CT

Memory type

Volatile

storage capacity

256Mb(8M x 32)

working temperature

-40°C ~ 85°C(TA)

Clock frequency

125 MHz

133 MHz

Encapsulation/Housing

90-VFBGA

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