Volatile100 MHz0°C ~ 70°C(TA)128Mb(4M x 32)-LPDDR2[Parameters, quotations, pictures, datasheet]-ICQQG

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LPDDR2

Total: 5

MT48V4M32LFF5-10:G

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 90VFBGA

MT48V4M32LFB5-10:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 90VFBGA

MT48V4M32LFB5-10:G

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 90VFBGA

MT48LC4M32LFF5-10:G

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 90VFBGA

MT48LC4M32LFB5-10:G

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 90VFBGA

Brand

Samsung

Micron

Hynix

nanya

ELPIDA

ISSI

Memory format

DRAM

Installation type

Surface mount

packing

TR

box

Memory type

Volatile

storage capacity

128Mb(4M x 32)

working temperature

0°C ~ 70°C(TA)

Clock frequency

100 MHz

Encapsulation/Housing

90-VFBGA

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