TR1Gb(64M x 16)533 MHz-40°C ~ 105°C(TC)-LPDDR2[Parameters, quotations, pictures, datasheet]-ICQQG

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LPDDR2

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EDB1316BDBH-1DAAT-F-R TR

Store: ShenZhen/Hongkong

Description：IC DRAM 1GBIT PARALLEL 134VFBGA

Brand

Samsung

Micron

Hynix

nanya

ELPIDA

ISSI

Memory format

DRAM

Installation type

Surface mount

packing

TR

Memory type

Volatile

storage capacity

1Gb(64M x 16)

working temperature

-40°C ~ 105°C(TC)

Clock frequency

533 MHz

Encapsulation/Housing

134-VFBGA

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