boxVolatile-40°C ~ 85°C(TA)100 MHz-LPDDR2[Parameters, quotations, pictures, datasheet]-ICQQG

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LPDDR2

Total: 12

MT48V8M16LFB4-10 IT:G

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 54VFBGA

MT48V4M32LFF5-10 IT:G

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 90VFBGA

MT48V4M32LFB5-10 IT:G

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 90VFBGA

MT48LC8M16LFF4-10 IT:G

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 54VFBGA

MT48LC8M16LFB4-10 IT:G

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 54VFBGA

MT48LC4M32LFF5-10 IT:G

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 90VFBGA

MT48LC4M32LFB5-10 IT:G

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 90VFBGA

MT48H8M32LFF5-10 IT

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 90VFBGA

MT48H8M32LFB5-10 IT

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 90VFBGA

MT48V8M16LFF4-10 IT:G

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 54VFBGA

MT48H16M32L2F5-10 IT

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 90VFBGA

MT48H16M32L2B5-10 IT

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 90VFBGA

Brand

Samsung

Micron

Hynix

nanya

ELPIDA

ISSI

Memory format

DRAM

Installation type

Surface mount

packing

box

Memory type

Volatile

storage capacity

128Mb(4M x 32)

256Mb(8M x 32)

512Mb(16M x 32)

128Mb(8M x 16)

working temperature

-40°C ~ 85°C(TA)

Clock frequency

100 MHz

Encapsulation/Housing

54-VFBGA

90-VFBGA

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