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LPDDR2

Total: 7

EDB4432BBBJ-1DAIT-F-R TR
Brand：Micron
Stock：1390
Store: ShenZhen/Hongkong
Description：IC DRAM 4GBIT PARALLEL 134FBGA
Offer
Price：1+
￥11.62
EDB4432BBBJ-1DAUT-F-R TR
Brand：Micron
Stock：11266
Store: ShenZhen/Hongkong
Description：IC DRAM 4GBIT PARALLEL 134FBGA
Offer
EDB4432BBBJ-1DAAT-F-R TR
Brand：Micron
Stock：16839
Store: ShenZhen/Hongkong
Description：IC DRAM 4GBIT PARALLEL 134FBGA
Offer
MT42L128M32D1TK-25 AIT:A TR
Brand：Micron
Stock：10315
Store: ShenZhen/Hongkong
Description：IC DRAM 4GBIT PARALLEL 134FBGA
Offer
MT42L128M32D1GU-25 WT:A TR
Brand：Micron
Stock：11496
Store: ShenZhen/Hongkong
Description：IC DRAM 4GBIT PARALLEL 134FBGA
Offer
Price：1+
￥12.50
MT42L128M32D1GU-18 WT:A TR
Brand：Micron
Stock：11011
Store: ShenZhen/Hongkong
Description：IC DRAM 4GBIT PARALLEL 134FBGA
Offer
EDB4432BBBJ-1D-F-R
Brand：Micron
Stock：17634
Store: ShenZhen/Hongkong
Description：IC DRAM 4GBIT PARALLEL 134FBGA
Offer
Brand

Samsung

Micron

Hynix

nanya

ELPIDA

ISSI

Memory format

DRAM

Installation type

Surface mount

packing

TR

Memory type

Volatile

storage capacity

4Gb(128M x 32)

working temperature

-40°C ~ 105°C(TC)

-40°C ~ 125°C(TC)

-40°C ~ 85°C(TC)

-25°C ~ 85°C(TC)

-30°C ~ 85°C(TC)

Clock frequency

400 MHz

533 MHz

Encapsulation/Housing

134-WFBGA

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