TRVolatile-30°C ~ 85°C(TC)8Gb(128M x 64)-LPDDR3[Parameters, quotations, pictures, datasheet]-ICQQG

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LPDDR3

Total: 3

EDF8164A3MD-GD-F-R TR

Store: ShenZhen/Hongkong

Description：IC DRAM 8GBIT PARALLEL 800MHZ

EDF8164A3MC-GD-F-R TR

Store: ShenZhen/Hongkong

Description：IC DRAM 8GBIT PARALLEL 800MHZ

EDF8164A3PK-JD-F-R TR

Store: ShenZhen/Hongkong

Description：IC DRAM 8GBIT PARALLEL 216FBGA

Brand

Samsung

Micron

Hynix

nanya

ELPIDA

Memory format

DRAM

Installation type

-

Surface mount

packing

TR

Part status

stop production

Memory type

Volatile

storage capacity

8Gb(128M x 64)

Voltage - Supply

1.14V ~ 1.95V

working temperature

-30°C ~ 85°C(TC)

Clock frequency

800 MHz

933 MHz

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