TRVolatile-30°C ~ 105°C(TC)1.14V ~ 1.95V-LPDDR3[Parameters, quotations, pictures, datasheet]-ICQQG

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LPDDR3

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EDFP112A3PF-JDTJ-F-R TR

Store: ShenZhen/Hongkong

Description：IC DRAM 24GBIT PARALLEL 933MHZ

Brand

Samsung

Micron

Hynix

nanya

ELPIDA

Memory format

DRAM

Installation type

-

packing

TR

Part status

stop production

Memory type

Volatile

storage capacity

24Gb(192M x 128)

Voltage - Supply

1.14V ~ 1.95V

working temperature

-30°C ~ 105°C(TC)

Clock frequency

933 MHz

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