TR533 MHz0°C ~ 95°C(TC)-LPDDR3[Parameters, quotations, pictures, datasheet]-ICQQG

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LPDDR3

Total: 4

MT49H32M18CFM-18:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 576MBIT PARALLEL 144UBGA

MT49H16M36FM-18:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 576MBIT PARALLEL 144UBGA

MT49H32M18CSJ-18:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 576MBIT PARALLEL 144FBGA

MT49H16M36SJ-18:B TR

Store: ShenZhen/Hongkong

Description：IC DRAM 576MBIT PARALLEL 144FBGA

Brand

Samsung

Micron

Hynix

nanya

ELPIDA

Memory format

DRAM

Installation type

Surface mount

packing

TR

Part status

On sale

Memory type

Volatile

storage capacity

576Mb(16M x 36)

Voltage - Supply

1.7V ~ 1.9V

working temperature

0°C ~ 95°C(TC)

Clock frequency

533 MHz

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