TR-40°C ~ 85°C(TA)4Gb(4G x 1)63-VFBGA-NAND FLASH[Parameters, quotations, pictures, datasheet]-ICQQG

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NAND FLASH

Total: 2

MT29F4G01AAADDHC-ITX:D TR

Store: ShenZhen/Hongkong

Description：IC FLASH 4GBIT SPI 63VFBGA

MT29F4G01AAADDHC-IT:D TR

Store: ShenZhen/Hongkong

Description：IC FLASH 4GBIT SPI 63VFBGA

Brand

Samsung

Micron

Hynix

GD

Winbond

Toshiba

Cypress

Spansion

ISSI

KIOXIA

packing

TR

storage capacity

4Gb(4G x 1)

working temperature

-40°C ~ 85°C(TA)

Encapsulation/Housing

63-VFBGA

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