TR4Gb(512M x 8)(NAND),2G(64M x 32)(LPDDR2)-25°C ~ 85°C(TA)162-VFBGA-NAND FLASH[Parameters, quotations, pictures, datasheet]-ICQQG

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NAND FLASH

Total: 1

MT29RZ4B2DZZHGSK-18 W.80E TR

Store: ShenZhen/Hongkong

Description：IC FLASH RAM 4GBIT PAR 162VFBGA

Brand

Samsung

Micron

Hynix

GD

Winbond

Toshiba

Cypress

Spansion

ISSI

KIOXIA

packing

TR

storage capacity

4Gb(512M x 8)(NAND),2G(64M x 32)(LPDDR2)

working temperature

-25°C ~ 85°C(TA)

Encapsulation/Housing

162-VFBGA

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