-25°C ~ 85°C(TA)137-VFBGA4Gb(512M x 8)(NAND),2Gb(64M x 32)(LPDRAM)-NAND FLASH[Parameters, quotations, pictures, datasheet]-ICQQG

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NAND FLASH

Total: 2

MT29C4G48MAAGBAAKS-5 WT

Store: ShenZhen/Hongkong

Description：IC FLASH RAM 4GBIT PAR 137VFBGA

MT29C4G48MAAGBAAKS-5 WT TR

Store: ShenZhen/Hongkong

Description：IC FLASH RAM 4GBIT PAR 137VFBGA

Brand

Samsung

Micron

Hynix

GD

Winbond

Toshiba

Cypress

Spansion

ISSI

KIOXIA

packing

bulk

TR

storage capacity

4Gb(512M x 8)(NAND),2Gb(64M x 32)(LPDRAM)

working temperature

-25°C ~ 85°C(TA)

Encapsulation/Housing

137-VFBGA

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