-40°C ~ 105°C(TA)4Gb(512M x 8)(NAND),8Gb(512M x 16)(LPDDR2)-NAND FLASH[Parameters, quotations, pictures, datasheet]-ICQQG

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NAND FLASH

Total: 2

MT29AZ5A3CHHWD-18AAT.84F TR

Store: ShenZhen/Hongkong

Description：IC FLASH RAM 4GBIT PAR 162VFBGA

MT29AZ5A3CHHWD-18AAT.84F

Store: ShenZhen/Hongkong

Description：IC FLASH RAM 4GBIT PAR 162VFBGA

Brand

Samsung

Micron

Hynix

GD

Winbond

Toshiba

Cypress

Spansion

ISSI

KIOXIA

packing

pallet

TR

storage capacity

4Gb(512M x 8)(NAND),8Gb(512M x 16)(LPDDR2)

working temperature

-40°C ~ 105°C(TA)

Encapsulation/Housing

162-VFBGA

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