bulk4Gb(512M x 8)-40°C ~ 105°C(TC)mould-NAND FLASH[Parameters, quotations, pictures, datasheet]-ICQQG

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NAND FLASH

Total: 1

MT29F4G08ABAFAM70A3WC1

Store: ShenZhen/Hongkong

Description：SLC 4G DIE 512MX8

Brand

Samsung

Micron

Hynix

GD

Winbond

Toshiba

Cypress

Spansion

ISSI

KIOXIA

packing

bulk

storage capacity

4Gb(512M x 8)

working temperature

-40°C ~ 105°C(TC)

Encapsulation/Housing

mould

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