TR-25°C ~ 85°C(TA)8Gb(512M x 16)(NAND),4Gb(128M x 32)(LPDRAM)-NAND FLASH[Parameters, quotations, pictures, datasheet]-ICQQG

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NAND FLASH

Total: 3

MT29C8G96MAAFBACKD-5 WT TR

Store: ShenZhen/Hongkong

Description：IC FLASH RAM 8GBIT PAR 200MHZ

MT29C8G96MAZBADKD-5 WT TR

Store: ShenZhen/Hongkong

Description：IC FLASH RAM 8GBIT PAR 168VFBGA

MT29C8G96MAZBADJV-5 WT TR

Store: ShenZhen/Hongkong

Description：IC FLASH RAM 8GBIT PAR 168VFBGA

Brand

Samsung

Micron

Hynix

GD

Winbond

Toshiba

Cypress

Spansion

ISSI

KIOXIA

packing

TR

storage capacity

8Gb(512M x 16)(NAND),4Gb(128M x 32)(LPDRAM)

working temperature

-25°C ~ 85°C(TA)

Encapsulation/Housing

168-VFBGA

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