Volatile64Mb(8M x 8,4M x 16)54-TSOP(0.400,10.16mm wide)Flash Memory-nonvolatile-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 3

MT48LC16M16A2P-7E IT:G

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

Price：1+

￥13.50

MT48LC64M8A2P-75:C

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PAR 54TSOP II

Price：1+

￥17.19

MT48LC32M8A2P-6A:D TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

Flash Memory-nonvolatile

packing

pallet

TR

Memory type

Volatile

storage capacity

256Mb(16M x 16)

256Mb(32M x 8)

512Mb(64M x 8)

64Mb(8M x 8,4M x 16)

Voltage - Supply

working temperature

-40°C ~ 85°C(TA)

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

technology

SDRAM

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