TR,CTVolatile60-FBGA128Mb(16M x 8)1.31V ~ 1.39V,1.46V ~ 1.55V-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 3

MT48LC16M8A2BB-6A:L TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 60FBGA

MT48LC16M8A2BB-7E:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 60FBGA

MT48LC16M8A2FB-75 IT:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 60FBGA

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR

TR,CT

Memory type

Volatile

storage capacity

128Mb(16M x 8)

576Mb(16M x 36)

Voltage - Supply

1.31V ~ 1.39V,1.46V ~ 1.55V

working temperature

-40°C ~ 85°C(TA)

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

60-FBGA

200-WFBGA

technology

SDRAM

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